锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

MUN5216T1G

MUN5216T1G

数据手册.pdf

NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTORS

Digital Transistors BRT

R1 = 4.7 kΩ, R2 = kΩ

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MUN5216T1G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.31 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 160 @5mA, 10V

额定功率Max 202 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 310 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70-3

外形尺寸

封装 SC-70-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

MUN5216T1G引脚图与封装图
暂无图片
在线购买MUN5216T1G
型号 制造商 描述 购买
MUN5216T1G ON Semiconductor 安森美 NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTORS 搜索库存
替代型号MUN5216T1G
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: MUN5216T1G

品牌: ON Semiconductor 安森美

封装: SOT-323 NPN 50V 100mA 310mW

当前型号

NPN硅偏置电阻晶体管 NPN SILICON BIAS RESISTOR TRANSISTORS

当前型号

型号: MUN5216T1

品牌: 安森美

封装: SOT-323 NPN 50V 100mA

类似代替

MUN5216T1 带阻NPN三极管 50V 100mA/0.1A 4.7k 增益160-350 SOT-323/SC-70 marking/标记 8F

MUN5216T1G和MUN5216T1的区别