MUN5112T1G
数据手册.pdf偏置电阻晶体管 Bias Resistor Transistor
- 双极 BJT - 单，预偏置 PNP - 预偏压 表面贴装型 SC-70-3（SOT323）
得捷:
TRANS PREBIAS PNP 202MW SC70-3
立创商城:
MUN5112T1G
贸泽:
双极晶体管 - 预偏置 100mA 50V BRT PNP
艾睿:
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor&s;s PNP MUN5112T1G digital transistor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R
Chip1Stop:
Trans Digital BJT PNP 50V 100mA 310mW Automotive 3-Pin SC-70 T/R
Verical:
Trans Digital BJT PNP 50V 100mA 310mW 3-Pin SC-70 T/R
Win Source:
TRANS PREBIAS PNP 202MW SC70-3