MMUN2135LT1G
数据手册.pdf双极晶体管 - 预偏置 PNP DIGITAL TRANSISTOR
- 双极 BJT - 单，预偏置 PNP - 预偏压 50 V 100 mA 246 mW 表面贴装型 SOT-23-3（TO-236）
立创商城:
MMUN2135LT1G
得捷:
TRANS PREBIAS PNP 246MW SOT23-3
贸泽:
双极晶体管 - 预偏置 PNP DIGITAL TRANSISTOR
艾睿:
ON Semiconductor&s;s PNP MMUN2135LT1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans Digital BJT PNP 50V 0.1A 3-Pin SOT-23 T/R
Verical:
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R