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MMUN2240LT1G

MMUN2240LT1G

数据手册.pdf

双极晶体管 - 预偏置 NPN DIGITAL TRANSISTOR

Look no further than "s NPN digital transistor"s, the ideal component to use when designing a digital signal processing unit. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

MMUN2240LT1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN

耗散功率 0.4 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 120 @5mA, 10V

额定功率Max 246 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 400 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23-3

外形尺寸

封装 SOT-23-3

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

MMUN2240LT1G引脚图与封装图
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