MMBT2222LT1G

ON SEMICONDUCTOR  MMBT2222LT1G.  单晶体管 双极, 通用, NPN, 30 V, 250 MHz, 225 mW, 600 mA, 250 hFE

通用 NPN ，最大 1A，On Semiconductor

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MMBT2222LT1G , NPN 晶体管, 600 mA, Vce=30 V, HFE:30, 100 MHz, 3引脚 SOT-23封装

得捷:
TRANS NPN 30V 0.6A SOT23-3

立创商城:
NPN 双极晶体管

贸泽:
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This NPN MMBT2222LT1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

Allied Electronics:
ON Semi MMBT2222LT1G NPN Bipolar Transistor; 0.6 A; 30 V; 3-Pin SOT-23

安富利:
Trans GP BJT NPN 30V 0.6A 3-Pin SOT-23 T/R

富昌:
MMBT Series 30 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23

Chip1Stop:
Trans GP BJT NPN 30V 0.6A 300mW Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 30V 0.6A Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMBT2222LT1G  Bipolar BJT Single Transistor, General Purpose, NPN, 30 V, 250 MHz, 300 mW, 600 mA, 250 hFE

Win Source:
TRANS NPN 30V 0.6A SOT23