L6388ED013TR
数据手册.pdfL6388 系列 双通道 400 mA 125 Ω 高压 高压侧和低压侧 驱动器 - SOIC-8
MOSFET & IGBT 驱动器,STMicroelectronics
立创商城:
半桥 IGBT MOSFET 灌:400mA 拉:650mA
得捷:
IC GATE DRVR HALF-BRIDGE 8SO
欧时:
MOSFET & IGBT 驱动器,STMicroelectronics### MOSFET & IGBT 驱动器,STMicroelectronics
艾睿:
Use this L6388ED013TR power driver from STMicroelectronics to power your transistors. This device has a maximum propagation delay time of 300 ns and a maximum power dissipation of 750 mW. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This gate driver has a minimum operating temperature of -45 °C and a maximum of 125 °C. This device has a maximum of 17 V.
安富利:
MOSFET DRVR 600V 0.65A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SO N T/R
Chip1Stop:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO N T/R
TME:
Driver; 400mA; 580V; 750mW; Channels:2; 400kHz; SO8; Usup:17V
Verical:
Driver 600V 0.65A 2-OUT High and Low Side Half Brdg Non-Inv 8-Pin SO N T/R
儒卓力:
**HaBr MOSvIGBTDr 600V SO-8 SMD **
力源芯城:
高压高低边驱动器
Win Source:
IC DRIVER HI/LO SIDE HV 8-SOIC