LM74610QDGKTQ1
TEXAS INSTRUMENTS LM74610QDGKTQ1 芯片, 二极管控制器, AEC-Q100, 100V, VSSOP-8
The is a Smart Diode Controller Device that can be used with an N-channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq. The LM74610-Q1 controller provides a gate drive for an external N-channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.
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- Qualified for automotive applications
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- AEC-Q100 qualified-Exceeds HBM ESD classification level2, device CDM ESD classification level C4B
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- Maximum reverse voltage of 45V
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- No positive voltage limitation to anode terminal
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- Charge pump gate driver for external N-channel MOSFET
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- Lower power dissipation than Schottky diode/PFET solutions
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- Low reverse leakage current
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- Zero IQ
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- Fast 2µs response to reverse polarity
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- Can be used in OR-ing applications
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- Meets CISPR25 EMI specification
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- Meets automotive ISO7637 transient
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- Requirements with a suitable TVS diode
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- No peak current limit