LET9045S

在塑料包装射频功率晶体管LDMOS增强技术 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Use this specially engineered RF amplifier from STMicroelectronics as a switching device in your electronic circuit design. Its maximum power dissipation is 79000 mW. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.

得捷:
TRANSISTOR RF POWER N-CH 80V 9A

艾睿:
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF Straight lead Tube

Chip1Stop:
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF Straight lead

Verical:
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF Straight lead Tube

DeviceMart:
TRANSISTOR RF POWER N-CH 80V 9A