APT75GN120LG

Trans IGBT Chip N-CH 1200V 200A 833000mW 3Pin3+Tab TO-264

This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 833000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.