AO3414

20V,3A,N沟道MOSFET

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 4.2A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.05Ω/Ohm @4.2A,2.5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1V 耗散功率Pd Power Dissipation| 1.4W Description & Applications| General Description The AO3400 uses advanced trench technology to provide excellent RDSONlow gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free meets ROHS & Sony 259 specifications. AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical. 描述与应用| AO3400采用先进的沟槽技术 提供优良的RDS（ON） 低栅极电荷和 操作与栅极电压低至2.5V。这 装置是适合用于作为负载开关或PWM 的应用程序。标准产品AO3400是无铅 （符合ROHS＆索尼259规格）。 AO3400L 是一种绿色产品订购选项。 AO3400和 AO3400L是电相同