IXTA76N075T、IXTP76N075T、FDB7080对比区别

高亮显示差异参数

型号 IXTA76N075T IXTP76N075T FDB7080

描述 D2PAK N-CH 75V 76ATO-220 N-CH 75V 76APower Field-Effect Transistor, 75A I(D), 80V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

数据手册 ---

制造商 IXYS Semiconductor IXYS Semiconductor Fairchild (飞兆/仙童)

分类 MOS管MOS管

安装方式 Surface Mount Through Hole -

封装 TO-263-3 TO-220-3 -

极性 N-CH N-Channel -

耗散功率 176W (Tc) 176W (Tc) -

漏源极电压(Vds) 75 V 75 V -

连续漏极电流(Ids) 76A 76.0 A -

输入电容(Ciss) 2580pF @25V(Vds) 2580pF @25V(Vds) -

耗散功率(Max) 176W (Tc) 176W (Tc) -

漏源极电阻 - 12.0 mΩ -

漏源击穿电压 - 75.0 V -

封装 TO-263-3 TO-220-3 -

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -

产品生命周期 Obsolete Obsolete Obsolete

包装方式 Tube Tube -

RoHS标准 RoHS Compliant RoHS Compliant -

含铅标准 Lead Free Lead Free -