1N5806、YG801C09R、1N5809对比区别

高亮显示差异参数

型号 1N5806 YG801C09R 1N5809

描述 Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon,SCHOTTKY BARRIER DIODE3A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, D2A, 2 PIN

数据手册 ---

制造商 Solid State Devices FUJI (富士电机) Semelab

分类

封装 - TO-220 -

封装 - TO-220 -

产品生命周期 Active Obsolete Active

RoHS标准 - - RoHS Compliant