2N7219、JANTXV2N7225U、IRFN250对比区别

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型号 2N7219 JANTXV2N7225U IRFN250

描述 Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3MOSFET N-CHPower Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

数据手册 ---

制造商 Microsemi (美高森美) Infineon (英飞凌)

分类 MOS管

封装 - TO-267 SMD-1

安装方式 - Surface Mount -

封装 - TO-267 SMD-1

产品生命周期 Active Active Active

包装方式 - Bulk -

RoHS标准 - Non-Compliant Non-Compliant

含铅标准 - Contains Lead -

耗散功率 - 4W (Ta), 150W (Tc) -

漏源极电压(Vds) - 200 V -

耗散功率(Max) - 4W (Ta), 150W (Tc) -

工作温度 - -55℃ ~ 150℃ (TJ) -