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KM416V254DT-L6、M5M4V4265CTP-6S、M5M4V4265CTP-6对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 KM416V254DT-L6 M5M4V4265CTP-6S M5M4V4265CTP-6

描述 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40EDO ( HYPER PAGE ) MODE 4194304 - BIT ( 262144 - WORD 16 - BIT)动态RAM EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAMEDO ( HYPER PAGE ) MODE 4194304 - BIT ( 262144 - WORD 16 - BIT)动态RAM EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

数据手册 ---

制造商 Samsung (三星) Mitsubishi (三菱) Mitsubishi (三菱)

分类

基础参数对比

封装 TSOP-2 TSOP-2 TSOP-2

封装 TSOP-2 TSOP-2 TSOP-2

产品生命周期 Obsolete Obsolete Obsolete

RoHS标准 - RoHS Compliant -