IXTA182N055T、IXTH182N055T、IXTP182N055T对比区别

高亮显示差异参数

型号 IXTA182N055T IXTH182N055T IXTP182N055T

描述 D2PAK N-CH 55V 182ATrans MOSFET N-CH 55V 182A 3Pin(3+Tab) TO-247TO-220AB N-CH 55V 182A

数据手册 ---

制造商 IXYS Semiconductor IXYS Semiconductor IXYS Semiconductor

分类 MOS管MOS管MOS管

安装方式 Surface Mount Through Hole Through Hole

封装 TO-263-3 TO-247-3 TO-220-3

引脚数 - - 3

极性 N-CH - N-Channel

耗散功率 360W (Tc) 360W (Tc) 360W (Tc)

漏源极电压(Vds) 55 V 55 V 55 V

连续漏极电流(Ids) 182A - 182 A

输入电容(Ciss) 4850pF @25V(Vds) 4850pF @25V(Vds) 4850pF @25V(Vds)

耗散功率(Max) 360W (Tc) 360W (Tc) 360W (Tc)

漏源极电阻 - - 5.00 mΩ

漏源击穿电压 - - 55.0 V

封装 TO-263-3 TO-247-3 TO-220-3

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Obsolete Obsolete Obsolete

包装方式 Tube Tube Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free