TP0610K-T1、VP0610T、TP0610K-T1-GE3对比区别

高亮显示差异参数

型号 TP0610K-T1 VP0610T TP0610K-T1-GE3

描述 MOSFET P-CH 60V 185mA SOT23Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PINVISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V

数据手册 ---

制造商 Vishay Siliconix Vishay Siliconix Vishay Siliconix

分类 MOS管MOS管MOS管

安装方式 Surface Mount Surface Mount Surface Mount

封装 SOT-23-3 SOT-23-3 SOT-23-3

极性 - P-Channel -

耗散功率 350mW (Ta) - 350mW (Ta)

漏源极电压(Vds) 60 V - 60 V

输入电容(Ciss) 23pF @25V(Vds) - 23pF @25V(Vds)

耗散功率(Max) 350mW (Ta) - 350mW (Ta)

封装 SOT-23-3 SOT-23-3 SOT-23-3

产品生命周期 Obsolete Obsolete Active

RoHS标准 RoHS Compliant Non-Compliant RoHS Compliant

含铅标准 Lead Free - Lead Free

工作温度 -55℃ ~ 150℃ (TJ) - -55℃ ~ 150℃ (TJ)