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IRFR214TRL、IRFR214TRLPBF、IRFR214对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IRFR214TRL IRFR214TRLPBF IRFR214

描述 Mosfet n-Ch 250V 2.2A DpakPower Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

数据手册 ---

制造商 Vishay Siliconix Vishay Intertechnology Harris

分类 MOS管

基础参数对比

安装方式 Surface Mount - -

封装 TO-252-3 TO-252 -

耗散功率 2.5W (Ta), 25W (Tc) - -

漏源极电压(Vds) 250 V - -

输入电容(Ciss) 140pF @25V(Vds) - -

耗散功率(Max) 2.5W (Ta), 25W (Tc) - -

封装 TO-252-3 TO-252 -

工作温度 -55℃ ~ 150℃ (TJ) - -

产品生命周期 Unknown Active Unknown

包装方式 Tape & Reel (TR) - -

RoHS标准 Non-Compliant RoHS Compliant -

含铅标准 Contains Lead - -