M36W108AB120ZM5T、M36W108AT120ZM1T、M36W108AB120ZM6T对比区别

高亮显示差异参数

型号 M36W108AB120ZM5T M36W108AT120ZM1T M36W108AB120ZM6T

描述 8兆位1Mb的X8 ，引导块闪存和1兆位128KB SRAM X8低电压多的内存产品 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory ProductMemory Circuit, 1MX8, PBGA48, 1MM PITCH, LBGA-488兆位1Mb的X8 ，引导块闪存和1兆位128KB SRAM X8低电压多的内存产品 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product

数据手册 ---

制造商 ST Microelectronics (意法半导体) Numonyx ST Microelectronics (意法半导体)

分类 EEPROM芯片EEPROM芯片

封装 LBGA LBGA LBGA

封装 LBGA LBGA LBGA

产品生命周期 Unknown Obsolete Unknown

RoHS标准 RoHS Compliant - RoHS Compliant