FDP7030BL、IRF3708PBF、IRLB8721PBF对比区别
型号 FDP7030BL IRF3708PBF IRLB8721PBF
描述 FAIRCHILD SEMICONDUCTOR FDP7030BL 晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 VThe IRF3708PBF from International Rectifier is 30V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features fast switching and fully avalanche rated. IRF3708PBF is applicable at high frequency DC to DC Isolated converters with synchronous rectification and high frequency buck converters for computer processor power.INFINEON IRLB8721PBF 晶体管, MOSFET, N沟道, 31 A, 30 V, 0.0065 ohm, 10 V, 1.8 V
数据手册 ---
制造商 Fairchild (飞兆/仙童) International Rectifier (国际整流器) Infineon (英飞凌)
分类 MOS管MOS管MOS管
安装方式 Through Hole Through Hole Through Hole
引脚数 3 3 3
封装 TO-220-3 TO-220-3 TO-220-3
额定电压(DC) 30.0 V 30.0 V -
额定电流 60.0 A 62.0 A -
针脚数 3 - 3
漏源极电阻 9 mΩ 12 mΩ 0.0065 Ω
极性 N-Channel N-Channel N-CH
耗散功率 65 W 87 W 65 W
阈值电压 1.9 V 2 V 1.8 V
输入电容 1.76 nF - 1077 pF
栅电荷 17.0 nC - -
漏源极电压(Vds) 30 V 30 V 30 V
漏源击穿电压 30.0 V 30.0 V -
栅源击穿电压 ±20.0 V - -
连续漏极电流(Ids) 60.0 A 62.0 A 62A
上升时间 12 ns 50.0 ns 93 ns
输入电容(Ciss) 1760pF @15V(Vds) 2417pF @15V(Vds) 1077pF @15V(Vds)
额定功率(Max) 60 W 87 W -
下降时间 19 ns - 17 ns
工作温度(Max) 175 ℃ 175 ℃ 175 ℃
工作温度(Min) -65 ℃ -55 ℃ -55 ℃
耗散功率(Max) 60W (Tc) - 65W (Tc)
产品系列 - IRF3708 -
额定功率 - - 65 W
长度 10.67 mm - 10.67 mm
宽度 4.83 mm - 4.83 mm
高度 9.4 mm - 9.02 mm
封装 TO-220-3 TO-220-3 TO-220-3
工作温度 -65℃ ~ 175℃ (TJ) -55℃ ~ 175℃ -55℃ ~ 175℃ (TJ)
产品生命周期 Unknown Active Active
包装方式 Tube Rail, Tube Tube
RoHS标准 RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free Lead Free
REACH SVHC标准 No SVHC No SVHC -
REACH SVHC版本 2015/06/15 2014/12/17 2015/12/17
ECCN代码 EAR99 - -