IRF3708PBF、STP90NF03L、FDP7030BL对比区别
型号 IRF3708PBF STP90NF03L FDP7030BL
描述 The IRF3708PBF from International Rectifier is 30V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features fast switching and fully avalanche rated. IRF3708PBF is applicable at high frequency DC to DC Isolated converters with synchronous rectification and high frequency buck converters for computer processor power.N沟道30V - 0.0056ohm - 90A TO- 220 / I2PAK低栅电荷STripFET⑩功率MOSFET N-CHANNEL 30V - 0.0056ohm - 90A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFETFAIRCHILD SEMICONDUCTOR FDP7030BL 晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 V
数据手册 ---
制造商 International Rectifier (国际整流器) ST Microelectronics (意法半导体) Fairchild (飞兆/仙童)
分类 MOS管MOS管MOS管
安装方式 Through Hole Through Hole Through Hole
引脚数 3 3 3
封装 TO-220-3 TO-220-3 TO-220-3
额定电压(DC) 30.0 V 30.0 V 30.0 V
额定电流 62.0 A 90.0 A 60.0 A
通道数 - 1 -
漏源极电阻 12 mΩ 6.5 mΩ 9 mΩ
极性 N-Channel N-Channel N-Channel
耗散功率 87 W 150 W 65 W
输入电容 - 2700 pF 1.76 nF
漏源极电压(Vds) 30 V 30 V 30 V
漏源击穿电压 30.0 V 30 V 30.0 V
栅源击穿电压 - ±20.0 V ±20.0 V
连续漏极电流(Ids) 62.0 A 90.0 A 60.0 A
上升时间 50.0 ns 200 ns 12 ns
输入电容(Ciss) 2417pF @15V(Vds) 2700pF @25V(Vds) 1760pF @15V(Vds)
额定功率(Max) 87 W 150 W 60 W
下降时间 - 105 ns 19 ns
工作温度(Max) 175 ℃ 150 ℃ 175 ℃
工作温度(Min) -55 ℃ -65 ℃ -65 ℃
耗散功率(Max) - 150W (Tc) 60W (Tc)
针脚数 - - 3
阈值电压 2 V - 1.9 V
栅电荷 - - 17.0 nC
产品系列 IRF3708 - -
长度 - 10.4 mm 10.67 mm
宽度 - 4.6 mm 4.83 mm
高度 - 9.15 mm 9.4 mm
封装 TO-220-3 TO-220-3 TO-220-3
工作温度 -55℃ ~ 175℃ -65℃ ~ 175℃ (TJ) -65℃ ~ 175℃ (TJ)
产品生命周期 Active Active Unknown
包装方式 Rail, Tube Tube Tube
RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free Lead Free
REACH SVHC标准 No SVHC - No SVHC
REACH SVHC版本 2014/12/17 - 2015/06/15
ECCN代码 - EAR99 EAR99