TP0610K-T1、TP0610KL-TR1-E3、TP0610K-T1-GE3对比区别

高亮显示差异参数

型号 TP0610K-T1 TP0610KL-TR1-E3 TP0610K-T1-GE3

描述 MOSFET P-CH 60V 185mA SOT23MOSFET, P-Channel, -60V, -185mA, 6Ω, TO-226AA (TO-92)VISHAY TP0610K-T1-GE3 MOSFET Transistor, P Channel, -185mA, -60V, 10Ω, -4.5V, -2V

数据手册 ---

制造商 Vishay Siliconix Vishay Siliconix Vishay Siliconix

分类 MOS管MOS管MOS管

安装方式 Surface Mount Through Hole Surface Mount

引脚数 - 3 -

封装 SOT-23-3 TO-226-3 SOT-23-3

漏源极电阻 - 6.00 Ω -

极性 - P-Channel -

耗散功率 350mW (Ta) 800mW (Ta) 350mW (Ta)

漏源极电压(Vds) 60 V 60 V 60 V

栅源击穿电压 - ±20.0 V -

连续漏极电流(Ids) - -270 mA -

耗散功率(Max) 350mW (Ta) 800mW (Ta) 350mW (Ta)

输入电容(Ciss) 23pF @25V(Vds) - 23pF @25V(Vds)

封装 SOT-23-3 TO-226-3 SOT-23-3

工作温度 -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ)

产品生命周期 Obsolete Obsolete Active

包装方式 - Cut Tape (CT) -

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free