BSM50GD120DN2E3226、CM50TU-24H、BSM35GD120D2对比区别

高亮显示差异参数

型号 BSM50GD120DN2E3226 CM50TU-24H BSM35GD120D2

描述 IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)POWEREX CM50TU-24H IGBT Array & Module Transistor, Six N Channel, 50A, 2.9V, 400W, 1.2kV, ModuleIGBT的功率模块（电源模块3相全桥包括快速续流二极管） IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

数据手册 ---

制造商 Siemens Semiconductor (西门子) Powerex Infineon (英飞凌)

分类 IGBT晶体管

安装方式 - Chassis -

引脚数 - 17 -

封装 - Module -

极性 - N-Channel -

耗散功率 - 400 W -

工作温度(Max) - 150 ℃ -

工作温度(Min) - -40 ℃ -

封装 - Module -

产品生命周期 Obsolete Obsolete Obsolete

RoHS标准 - RoHS Compliant -

含铅标准 - Lead Free -