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IDT70T3519S133BFGI、IDT70T651S12BFI、70T3519S166BFGI8对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IDT70T3519S133BFGI IDT70T651S12BFI 70T3519S166BFGI8

描述 Dual-Port SRAM, 256KX36, 15ns, CMOS, PBGA208, 15 X 15MM, 1.4MM HEIGHT, 0.8MM PITCH, GREEN, FPBGA-208HIGH -SPEED 2.5V 256 / 128K ×36异步双口静态RAM为3.3V 0R 2.5V接口 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACEHIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

数据手册 ---

制造商 Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌)

分类 存储芯片存储芯片

基础参数对比

封装 FBGA-208 LFBGA -

电源电压 2.4V ~ 2.6V - -

封装 FBGA-208 LFBGA -

工作温度 -40℃ ~ 85℃ - -

产品生命周期 Unknown Unknown Active

包装方式 Tray Tray -

RoHS标准 RoHS Compliant Non-Compliant RoHS Compliant

含铅标准 Lead Free Contains Lead -

ECCN代码 3A991 3A991 -