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IDT70T3519S133BCI、IDT70T3519S166BCI、IDT70T3519S200BCG对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IDT70T3519S133BCI IDT70T3519S166BCI IDT70T3519S200BCG

描述 HIGH -SPEED 2.5V一百二十八分之二百五十六/ 64K ×36同步双端口静态3.3V或2.5V接口RAM HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACEHIGH -SPEED 2.5V一百二十八分之二百五十六/ 64K ×36同步双端口静态3.3V或2.5V接口RAM HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACEDual-Port SRAM, 256KX36, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256

数据手册 ---

制造商 Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌)

分类 存储芯片存储芯片存储芯片

基础参数对比

封装 LBGA LBGA LBGA

封装 LBGA LBGA LBGA

产品生命周期 Unknown Unknown Unknown

包装方式 Tray Tray Tray

RoHS标准 Non-Compliant Non-Compliant RoHS Compliant

ECCN代码 3A991 3A991 3A991