FQB2N90TM、IRFBF20SPBF、IRFBF20S对比区别

高亮显示差异参数

型号 FQB2N90TM IRFBF20SPBF IRFBF20S

描述 Trans MOSFET N-CH 900V 2.2A 3Pin(2+Tab) D2PAK T/RPower Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

数据手册 ---

制造商 Fairchild (飞兆/仙童) Vishay Intertechnology Vishay Intertechnology

分类 MOS管

安装方式 Surface Mount - -

封装 TO-263-3 - -

额定电压(DC) 900 V - -

额定电流 2.20 A - -

漏源极电阻 7.20 Ω - -

极性 N-Channel - -

耗散功率 3.13W (Ta), 85W (Tc) - -

漏源极电压(Vds) 900 V - -

漏源击穿电压 900 V - -

栅源击穿电压 ±30.0 V - -

连续漏极电流(Ids) 2.20 A - -

输入电容(Ciss) 500pF @25V(Vds) - -

额定功率(Max) 3.13 W - -

耗散功率(Max) 3.13W (Ta), 85W (Tc) - -

封装 TO-263-3 - -

工作温度 -55℃ ~ 150℃ (TJ) - -

产品生命周期 Unknown Active Obsolete

包装方式 Tape - -

RoHS标准 RoHS Compliant RoHS Compliant -

含铅标准 Lead Free Lead Free -

ECCN代码 EAR99 - -