MRF323、SD1143、VHB50-28S对比区别
型号 MRF323 SD1143 VHB50-28S
描述 RF功率晶体管NPN硅 RF POWER TRANSISTOR NPN SILICONRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPNRF Power Bipolar Transistor, 1Element, Very High Frequency Band, Silicon, NPN, 0.38INCH, STUD PACKAGE-4
数据手册 ---
制造商 M/A-Com Advanced Semiconductor Advanced Semiconductor
分类 双极性晶体管
安装方式 Chassis - -
封装 244-04 - -
耗散功率 55 W - -
输出功率 20 W - -
击穿电压(集电极-发射极) 33 V - -
增益 11 dB - -
最小电流放大倍数(hFE) 20 @1A, 5V - -
额定功率(Max) 20 W - -
封装 244-04 - -
产品生命周期 Active Active Active
包装方式 Tray - -
RoHS标准 RoHS Compliant - -
含铅标准 Lead Free - -