MRF323、SD1143、VHB50-28S对比区别

高亮显示差异参数

型号 MRF323 SD1143 VHB50-28S

描述 RF功率晶体管NPN硅 RF POWER TRANSISTOR NPN SILICONRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPNRF Power Bipolar Transistor, 1Element, Very High Frequency Band, Silicon, NPN, 0.38INCH, STUD PACKAGE-4

数据手册 ---

制造商 M/A-Com Advanced Semiconductor Advanced Semiconductor

分类 双极性晶体管

安装方式 Chassis - -

封装 244-04 - -

耗散功率 55 W - -

输出功率 20 W - -

击穿电压(集电极-发射极) 33 V - -

增益 11 dB - -

最小电流放大倍数(hFE) 20 @1A, 5V - -

额定功率(Max) 20 W - -

封装 244-04 - -

产品生命周期 Active Active Active

包装方式 Tray - -

RoHS标准 RoHS Compliant - -

含铅标准 Lead Free - -