H5TQ1G83BFR-H9C、K4B1G0846E-HCH9、NT5CB128M8DN-DH对比区别

高亮显示差异参数

型号 H5TQ1G83BFR-H9C K4B1G0846E-HCH9 NT5CB128M8DN-DH

描述 DDR DRAM, 128MX18, 20ns, CMOS, PBGA78, HALOGEN FREE & ROHS COMPLIANT, FPBGA-781Gbit DDR3 SDRAM 1333MHz 78-FBGA - K4B1G0846E-HCH9DRAM Chip DDR3 SDRAM 1Gbit 128Mx8 1.5V 78Pin WBGA

数据手册 ---

制造商 SK Hynix (海力士) Samsung (三星) Nanya (南亚)

分类

封装 TFBGA TFBGA TFBGA

封装 TFBGA TFBGA TFBGA

产品生命周期 Obsolete Obsolete Obsolete

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free -