IXTU12N06T、IXTY12N06T、STD12NF06-1对比区别

高亮显示差异参数

型号 IXTU12N06T IXTY12N06T STD12NF06-1

描述 TO-251 N-CH 60V 12ADPAK N-CH 60V 12AN沟道60V - 0.08ヘ - 12A - DPAK - IPAK STripFET⑩ II功率MOSFET N-channel 60V - 0.08ヘ - 12A - DPAK - IPAK STripFET⑩ II Power MOSFET

数据手册 ---

制造商 IXYS Semiconductor IXYS Semiconductor ST Microelectronics (意法半导体)

分类 MOS管MOS管MOS管

安装方式 Through Hole Surface Mount Through Hole

封装 TO-251-3 TO-252-3 TO-251-3

极性 N-CH N-CH N-Channel

耗散功率 33W (Tc) 33W (Tc) 30W (Tc)

漏源极电压(Vds) 60 V 60 V 60 V

连续漏极电流(Ids) 12A 12A 12.0 A

输入电容(Ciss) 256pF @25V(Vds) 256pF @25V(Vds) 315pF @25V(Vds)

耗散功率(Max) 33W (Tc) 33W (Tc) 30W (Tc)

额定电压(DC) - - 60.0 V

额定电流 - - 12.0 A

漏源极电阻 - - 100 mΩ

漏源击穿电压 - - 60.0 V

栅源击穿电压 - - ±20.0 V

封装 TO-251-3 TO-252-3 TO-251-3

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Active Obsolete Obsolete

包装方式 Tube Tube Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free