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IRFR214PBF、IRFR214TRL、IRFR214TRLPBF对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IRFR214PBF IRFR214TRL IRFR214TRLPBF

描述 Power Field-Effect Transistor, 2.2A I(D), 250V, 2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3Mosfet n-Ch 250V 2.2A DpakPower Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

数据手册 ---

制造商 Vishay Intertechnology Vishay Siliconix Vishay Intertechnology

分类 MOS管

基础参数对比

封装 TO-252 TO-252-3 TO-252

安装方式 - Surface Mount -

封装 TO-252 TO-252-3 TO-252

产品生命周期 Active Unknown Active

包装方式 - Tape & Reel (TR) -

RoHS标准 RoHS Compliant Non-Compliant RoHS Compliant

含铅标准 Lead Free Contains Lead -

耗散功率 - 2.5W (Ta), 25W (Tc) -

漏源极电压(Vds) - 250 V -

输入电容(Ciss) - 140pF @25V(Vds) -

耗散功率(Max) - 2.5W (Ta), 25W (Tc) -

工作温度 - -55℃ ~ 150℃ (TJ) -