FLM5964-4F、FLM5964-6F、FLM5964-8F对比区别

高亮显示差异参数

型号 FLM5964-4F FLM5964-6F FLM5964-8F

描述 RF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2PinRF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2PinRF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2Pin

数据手册 ---

制造商 Sumitomo (住友) Sumitomo (住友) Sumitomo (住友)

分类

封装 CASE IB CASE IB CASE IB

频率 5.9GHz ~ 6.4GHz 5.9GHz ~ 6.4GHz 5.9GHz ~ 6.4GHz

封装 CASE IB CASE IB CASE IB

产品生命周期 Active Active Active

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free

香港进出口证 NLR NLR NLR