IXTY12N06T、IXTY12N06TTRL、IXTU12N06T对比区别

高亮显示差异参数

型号 IXTY12N06T IXTY12N06TTRL IXTU12N06T

描述 DPAK N-CH 60V 12AMosfet n-Ch 60V 12A To-252TO-251 N-CH 60V 12A

数据手册 ---

制造商 IXYS Semiconductor IXYS Semiconductor IXYS Semiconductor

分类 MOS管MOS管MOS管

安装方式 Surface Mount Surface Mount Through Hole

封装 TO-252-3 TO-252-3 TO-251-3

极性 N-CH - N-CH

耗散功率 33W (Tc) 33W (Tc) 33W (Tc)

漏源极电压(Vds) 60 V 60 V 60 V

连续漏极电流(Ids) 12A - 12A

输入电容(Ciss) 256pF @25V(Vds) 256pF @25V(Vds) 256pF @25V(Vds)

耗散功率(Max) 33W (Tc) 33W (Tc) 33W (Tc)

封装 TO-252-3 TO-252-3 TO-251-3

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Obsolete Obsolete Active

包装方式 Tube Cut Tape (CT) Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free