IRFBC30S、IRFBC30STRL、SIHFBC30STRL-GE3对比区别

高亮显示差异参数

型号 IRFBC30S IRFBC30STRL SIHFBC30STRL-GE3

描述 MOSFET N-CH 600V 3.6A D2PAKMosfet n-Ch 600V 3.6A D2pakSIHFBC30STRL-GE3 N-channel MOSFET Transistor, 3.6A, 600V, 3Pin D2PAK

数据手册 ---

制造商 Vishay Siliconix Vishay Siliconix Vishay Siliconix

分类 MOS管MOS管MOS管

安装方式 Surface Mount Surface Mount -

封装 TO-263-3 TO-263-3 D2PAK

耗散功率 3.1W (Ta), 74W (Tc) 3.1W (Ta), 74W (Tc) -

漏源极电压(Vds) 600 V 600 V -

输入电容(Ciss) 660pF @25V(Vds) 660pF @25V(Vds) -

耗散功率(Max) 3.1W (Ta), 74W (Tc) 3.1W (Ta), 74W (Tc) -

封装 TO-263-3 TO-263-3 D2PAK

工作温度 -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ) -

产品生命周期 Obsolete Unknown Active

包装方式 - Tape & Reel (TR) -

RoHS标准 Non-Compliant Non-Compliant RoHS Compliant

含铅标准 Contains Lead Contains Lead -