IS42S16100-7BL、W9816G6IB-6、IS42VS16100F-75BLI对比区别

高亮显示差异参数

型号 IS42S16100-7BL W9816G6IB-6 IS42VS16100F-75BLI

描述 Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 MM X 6.40 MM, 0.65 MM PITCH, LEAD FREE, FBGA-60IC SDRAM 16Mbit 166MHz 60VFBGASynchronous DRAM, 1MX16, 6ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, LEAD FREE, TFBGA-60

数据手册 ---

制造商 Integrated Silicon Solution(ISSI) Winbond Electronics (华邦电子股份) Integrated Silicon Solution(ISSI)

分类 存储芯片

封装 TFBGA TFBGA-60 TFBGA

封装 TFBGA TFBGA-60 TFBGA

产品生命周期 Active Active Active

包装方式 - Tray -

RoHS标准 RoHS Compliant RoHS Compliant

含铅标准 - 无铅 -

电源电压 - 3V ~ 3.6V -

工作温度 - 0℃ ~ 70℃ (TA) -