LB1213M、TD62503PG、TD62504P对比区别

高亮显示差异参数

型号 LB1213M TD62503PG TD62504P

描述 General-Purpose Transistor ArrayPDIP NPN 35V 200mAPDIP NPN 35V 200mA

数据手册 ---

制造商 Sanyo Semiconductor (三洋) Toshiba (东芝) Toshiba (东芝)

分类

安装方式 - Through Hole Through Hole

封装 - PDIP PDIP

极性 - NPN NPN

击穿电压(集电极-发射极) - 35 V 35 V

集电极最大允许电流 - 200mA 200mA

封装 - PDIP PDIP

产品生命周期 Obsolete Obsolete Obsolete

RoHS标准 - RoHS Compliant RoHS Compliant