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IXFA130N10T、IXFP130N10T、IXTA220N075T对比区别

P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IXFA130N10T IXFP130N10T IXTA220N075T

描述 TO-263AA N-CH 100V 130ATO-220 N-CH 100V 130AMOSFET N-CH 75V 220A TO-263

数据手册 ---

制造商 IXYS Semiconductor IXYS Semiconductor IXYS Semiconductor

分类 MOS管MOS管MOS管

基础参数对比

安装方式 Surface Mount Through Hole Surface Mount

封装 TO-263-3 TO-220-3 TO-263-3

通道数 1 - -

漏源极电阻 9.1 mΩ 9.1 mΩ -

极性 N-CH N-CH -

耗散功率 360W (Tc) 360W (Tc) 480W (Tc)

漏源极电压(Vds) 100 V 100 V 75 V

漏源击穿电压 100 V 100 V -

连续漏极电流(Ids) 130A 130A -

输入电容(Ciss) 5080pF @25V(Vds) 5080pF @25V(Vds) 7700pF @25V(Vds)

耗散功率(Max) 360W (Tc) 360W (Tc) 480W (Tc)

封装 TO-263-3 TO-220-3 TO-263-3

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Not Recommended for New Designs Not Recommended for New Designs Obsolete

包装方式 Tube Tube Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free