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JAN1N5420US

数据手册.pdf

DIODE GEN PURP 600V 3A D5B

This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated.  These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “_Category 1_” metallurgical bond.  These devices are also available in axial-leaded packages for thru-hole mounting.  also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

JAN1N5420US中文资料参数规格
技术参数

正向电压 1.5V @9A

反向恢复时间 400 ns

正向电压Max 1.5V @9A

封装参数

安装方式 Surface Mount

封装 SQ-MELF

外形尺寸

封装 SQ-MELF

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准

含铅标准

JAN1N5420US引脚图与封装图
JAN1N5420US引脚图

JAN1N5420US引脚图

JAN1N5420US封装图

JAN1N5420US封装图

JAN1N5420US封装焊盘图

JAN1N5420US封装焊盘图

在线购买JAN1N5420US
型号 制造商 描述 购买
JAN1N5420US Microsemi 美高森美 DIODE GEN PURP 600V 3A D5B 搜索库存
替代型号JAN1N5420US
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: JAN1N5420US

品牌: Microsemi 美高森美

封装: SQ-MELF

当前型号

DIODE GEN PURP 600V 3A D5B

当前型号

型号: JANTX1N5420US

品牌: 美高森美

封装: SQ-MELF

完全替代

Diode Switching 600V 3A 2Pin E-MELF

JAN1N5420US和JANTX1N5420US的区别

型号: JANTXV1N5420US

品牌: 美高森美

封装: SQ-MELF

类似代替

DIODE GEN PURP 600V 3A D5B

JAN1N5420US和JANTXV1N5420US的区别

型号: 1N5420US

品牌: 美高森美

封装: E_SQ._MELF

类似代替

无空隙气密式表面安装快恢复整流二极管玻璃 VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS

JAN1N5420US和1N5420US的区别