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JAN1N5620US

JAN1N5620US

数据手册.pdf

Diode Gen Purp 800V 1A D5a

This “standard recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded thru-hole package configurations see separate data sheet for 1N5614 thru 1N5622. also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

JAN1N5620US中文资料参数规格
技术参数

正向电压 1.3V @3A

反向恢复时间 2 µs

工作温度Max 200 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 A-MELF

外形尺寸

封装 A-MELF

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

含铅标准

JAN1N5620US引脚图与封装图
暂无图片
在线购买JAN1N5620US
型号 制造商 描述 购买
JAN1N5620US Microsemi 美高森美 Diode Gen Purp 800V 1A D5a 搜索库存
替代型号JAN1N5620US
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: JAN1N5620US

品牌: Microsemi 美高森美

封装: A_SQ._MELF

当前型号

Diode Gen Purp 800V 1A D5a

当前型号

型号: 1N5620US

品牌: 美高森美

封装: A_SQ._MELF

完全替代

标准整流器( TRR超过500ns的) Standard Rectifier trr more than 500ns

JAN1N5620US和1N5620US的区别

型号: JANTX1N5620US

品牌: 美高森美

封装: A_SQ._MELF

类似代替

Diode Switching 800V 1A 2Pin A-MELF

JAN1N5620US和JANTX1N5620US的区别

型号: JANTXV1N5620US

品牌: 美高森美

封装: D-5A-2

功能相似

Diode Switching 800V 1A 2Pin A-MELF

JAN1N5620US和JANTXV1N5620US的区别