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JANTXV2N6800

JANTXV2N6800

数据手册.pdf

每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

This family of switching transistors is military qualified up to the JANTXV level for high-reliability applications.  The 2N6798 part number is also qualified to the JANS level.  These devices are also available in a low profile U-18 LCC surface mount package.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

JANTXV2N6800中文资料参数规格
技术参数

耗散功率 0.8 W

漏源极电压Vds 400 V

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 800mW Ta, 25W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-205

外形尺寸

封装 TO-205

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

JANTXV2N6800引脚图与封装图
暂无图片
在线购买JANTXV2N6800
型号 制造商 描述 购买
JANTXV2N6800 Microsemi 美高森美 每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 搜索库存
替代型号JANTXV2N6800
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: JANTXV2N6800

品牌: Microsemi 美高森美

封装: ~5°C/W

当前型号

每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

当前型号

型号: 2N6800

品牌:

封装:

功能相似

Power Field-Effect Transistor, 3A ID, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

JANTXV2N6800和2N6800的区别