JANTX2N3467
数据手册.pdfMicrosemi(美高森美)
分立器件
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
If you require a general purpose BJT that can handle high voltages, then the PNP BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.