JANTX2N3468
数据手册.pdfMicrosemi(美高森美)
分立器件
PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR
The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 175 °C.