JANS2N2905A

PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR

This family of 2N2904A and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications.  These devices are also available in a TO-5 package.

also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

艾睿:
If you require a general purpose BJT that can handle high voltages, then the PNP JANS2N2905A BJT, developed by Microsemi, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.