JANTX2N6059

NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR

This high speed NPN transistor is rated at 12 amps and is military qualified up to a JANTXV level.  This TO-204AA isolated package features a 180 degree lead orientation.

贸泽:
Darlington Transistors Power BJT

艾睿:
Are you looking for an amplified current signal in your circuit? The NPN JANTX2N6059 Darlington transistor from Microsemi yields a much higher gain than other transistors. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@120mA@12A V. This product&s;s maximum continuous DC collector current is 12 A, while its minimum DC current gain is 1000@1A@3 V|1000@6A@3V|150@12A@3V. It has a maximum collector emitter saturation voltage of 2@24mA@6A|3@120mA@12A V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Verical:
Trans Darlington NPN 100V 12A 150000mW 3-Pin2+Tab TO-3 Tray