JANTXV2N6990
数据手册.pdfMicrosemi(美高森美)
分立器件
Trans GP BJT NPN 50V 0.8A 14Pin FPAK
Compared to other transistors, the NPN general purpose bipolar junction transistor, developed by , can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 400 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.