JANTX2N3868
数据手册.pdfMicrosemi(美高森美)
分立器件
硅PNP功率晶体管 Silicon PNP Power Transistors
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.