JANTXV2N3810
数据手册.pdfMicrosemi(美高森美)
分立器件
TO-78 PNP 60V 0.05A
Bipolar BJT Transistor Array 2 PNP Dual 60V 50mA 350mW Through Hole TO-78-6
艾睿:
The three terminals of this PNP JANTXV2N3810 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.