JANTXV2N5665
数据手册.pdfMicrosemi(美高森美)
分立器件
NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR
Do you require a transistor in your circuit operating in the high-voltage range? This NPN general purpose bipolar junction transistor, developed by , is your solution. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2500 mW. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.