JANTX1N4099DUR-1
数据手册.pdf硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES
• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435
• LEADLESS PACKAGE FOR SURFACE MOUNT
• LOW CURRENT OPERATION AT 250 µA
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ TEC= +125°C
Power Derating: 10mW/ °C above TEC= +125°C
Forward Derating @ 200 mA: 1.1 Volts maximum
艾睿:
If you need a diode to operate in the reverse breakdown region then use a voltage regulator JANTX1N4099DUR-1 zener diode from Microsemi. Its test current is 0.25 mA. This device has a maximum regulator current of 56 mA. Its maximum power dissipation is 500 mW. Its maximum leakage current is 1 μA. This zener device has a nominal voltage of 6.8 V and a voltage tolerance of 1%. It is made in a single configuration. This zener diode has an operating temperature range of -65 °C to 175 °C.
Verical:
Zener Diode Single 6.8V 1% 200Ohm 500mW 2-Pin DO-213AA Bag