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JANTXV1N5809US

JANTXV1N5809US

数据手册.pdf

Diode Switching 100V 6A 2Pin E-MELF

This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated.  The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal _“Category 1”_ metallurgical bond.  These devices are available in both leaded and surface mount MELF package configurations. also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

JANTXV1N5809US中文资料参数规格
技术参数

正向电压 0.875 V

热阻 52 ℃/W

反向恢复时间 30 ns

正向电流 6000 mA

正向电压Max 875mV @4A

正向电流Max 6 A

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 SQ-MELF

外形尺寸

封装 SQ-MELF

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

JANTXV1N5809US引脚图与封装图
暂无图片
在线购买JANTXV1N5809US
型号 制造商 描述 购买
JANTXV1N5809US Microsemi 美高森美 Diode Switching 100V 6A 2Pin E-MELF 搜索库存
替代型号JANTXV1N5809US
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: JANTXV1N5809US

品牌: Microsemi 美高森美

封装: SQ-MELF

当前型号

Diode Switching 100V 6A 2Pin E-MELF

当前型号

型号: JANS1N5809US

品牌: Sensitron Semiconductor

封装:

类似代替

Diode Switching 100V 6A 2Pin MELF-B

JANTXV1N5809US和JANS1N5809US的区别

型号: 1N5809US

品牌: 美高森美

封装: E-MELF

功能相似

无空隙 - 密封式超快恢复整流二极管玻璃 VOIDLESS - HERMETICALLY- SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

JANTXV1N5809US和1N5809US的区别

型号: 1N5624

品牌: NTE Electronics

封装:

功能相似

NTE ELECTRONICS 1N5624 Standard Recovery Diode, 200V, 3A, Single, 1.2V, 200A

JANTXV1N5809US和1N5624的区别