JANTX2N5666
数据手册.pdfMicrosemi(美高森美)
分立器件
NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.