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JANTXV1N5811

JANTXV1N5811

数据手册.pdf

军事审批,效率高, 2.5安培和6.0 AMP MILITARY APPROVED, HIGH EFFICIENCY, 2.5 AMP AND 6.0 AMP

This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated.  The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal _“Category 1”_ metallurgical bond.  These devices are available in both leaded and surface mount MELF package configurations. also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

JANTXV1N5811中文资料参数规格
技术参数

正向电压 0.875 V

热阻 52 ℃/W

反向恢复时间 30 ns

正向电流 125 A

正向电压Max 875mV @4A

正向电流Max 6000 mA

工作温度Max 175 ℃

工作温度Min 65 ℃

封装参数

安装方式 Through Hole

引脚数 2

封装 Case E

外形尺寸

长度 7.62 mm

封装 Case E

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

军工级 Yes

JANTXV1N5811引脚图与封装图
暂无图片
在线购买JANTXV1N5811
型号 制造商 描述 购买
JANTXV1N5811 Microsemi 美高森美 军事审批,效率高, 2.5安培和6.0 AMP MILITARY APPROVED, HIGH EFFICIENCY, 2.5 AMP AND 6.0 AMP 搜索库存
替代型号JANTXV1N5811
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: JANTXV1N5811

品牌: Microsemi 美高森美

封装: Case

当前型号

军事审批,效率高, 2.5安培和6.0 AMP MILITARY APPROVED, HIGH EFFICIENCY, 2.5 AMP AND 6.0 AMP

当前型号

型号: 1N5624

品牌: NTE Electronics

封装:

功能相似

NTE ELECTRONICS 1N5624 Standard Recovery Diode, 200V, 3A, Single, 1.2V, 200A

JANTXV1N5811和1N5624的区别

型号: MUR460

品牌: Diotec Semiconductor

封装:

功能相似

Diode: rectifying; 600V; 4A; 22A; 60ns

JANTXV1N5811和MUR460的区别

型号: MBR2045CT

品牌: 固锝

封装:

功能相似

Diode Schottky 45V 20A 3Pin3+Tab TO-220AB

JANTXV1N5811和MBR2045CT的区别